Buy Through-Hole (DIP) Transistors Online in Bulk from Trusted Supplier in India
Shop General Purpose DIP Transistors for OEM & Projects
Need reliable DIP transistors for your electronic circuits, manufacturing needs, or repair projects? DDS International offers a wide range of high-performance through-hole transistors.
Our collection includes popular models like BC547, BC557, 8050, 8550, 2N2222A, BT134, BT136, and more. These transistors are ideal for use in power supplies, audio circuits, control boards, and general-purpose electronic applications. Available in bulk with fast delivery across India.
- Minimum quantity should 1000 of "431 TL Through Hole Dip Transistor"
DVAN
Showing all 12 results
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DVAN, Through Hole (DIP) Transistor
134 BT Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 10mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
136 BT Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 600V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current: 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
1726 2N2222A Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 800mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 100 to 300 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
1815 Through Hole DipTransistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 50V (maximum)
- Collector Current : 150mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 300mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
406 PCR Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
431 TL Through Hole Dip Transistor
Specification:
- Type: Adjustable Shunt Regulator
- Package Type: Through-hole
- Anode Voltage : 36V (maximum)
- Cathode Voltage : 36V (maximum)
- Output Current : 1mA to 100mA (typical)
- Dynamic Impedance: 0.22Ω (typical)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
457 Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
548 Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 30V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
557 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
558 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
8550 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 1A (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 40 to 320 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a
