Transistor 8050

Specification:

1. Type: PNP Bipolar Junction Transistor (BJT)
2. Package Type: TO-92 (through-hole)
3. Collector-Emitter Voltage : 40V (maximum)
4. Collector Current : 100mA (maximum)
5. Emitter-Base Voltage : 5V (maximum)
6. DC Current Gain : 110 to 800 (depending on the variant)
7. Transition Frequency : 250MHz (typical)
8. Power Dissipation : 500mW (maximum)
9. Operating Temperature: -55°C to +150°C

Specification:

1. Type: NPN Bipolar Junction Transistor (BJT)
2. Package Type: TO-92 (through-hole)
3. Collector-Emitter Voltage : 45V (maximum)
4. Collector Current : 100mA (maximum)
5. Emitter-Base Voltage : 5V (maximum)
6. DC Current Gain : 110 to 800 (depending on the variant)
7. Transition Frequency : 250MHz (typical)
8. Power Dissipation : 500mW (maximum)
9. Operating Temperature: -55°C to +150°C

Specification:

1. Type: NPN Bipolar Junction Transistor (BJT)
2. Package Type: TO-92 (through-hole)
3. Collector-Emitter Voltage : 50V (maximum)
4. Collector Current : 150mA (maximum)
5. Emitter-Base Voltage : 5V (maximum)
6. DC Current Gain : 110 to 800 (depending on the variant)
7. Transition Frequency : 250MHz (typical)
8. Power Dissipation : 300mW (maximum)
9. Operating Temperature: -55°C to +150°C