DVAN
Showing all 12 results
-
DVAN, Through Hole (DIP) Transistor
Transistor 1815
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 50V (maximum)
- Collector Current : 150mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 300mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor 2N2222A 1726
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 800mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 100 to 300 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor 8550
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 1A (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 40 to 320 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 547
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 548
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 30V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 557
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 558
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BT 134
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 10mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BT 136
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 600V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current: 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor PCR 406
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor TL 431
Specification:
- Type: Adjustable Shunt Regulator
- Package Type: Through-hole
- Anode Voltage : 36V (maximum)
- Cathode Voltage : 36V (maximum)
- Output Current : 1mA to 100mA (typical)
- Dynamic Impedance: 0.22Ω (typical)
- Operating Temperature: -40°C to +125°C
SKU: n/a
