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Transistor 8550

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Specification:

  1. Type: PNP Bipolar Junction Transistor (BJT)
  2. Package Type: TO-92 (through-hole)
  3. Collector-Emitter Voltage : 40V (maximum)
  4. Collector Current : 1A (maximum)
  5. Emitter-Base Voltage : 5V (maximum)
  6. DC Current Gain : 40 to 320 (depending on the variant)
  7. Transition Frequency : 250MHz (typical)
  8. Power Dissipation : 500mW (maximum)
  9. Operating Temperature: -55°C to +150°C

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