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8050 Through Hole Dip Transistor


Specification:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package Type: TO-92 (through-hole)
  3. Collector-Emitter Voltage : 45V (maximum)
  4. Collector Current : 1A (maximum)
  5. Emitter-Base Voltage : 5V (maximum)
  6. DC Current Gain : 40 to 320 (depending on the variant)
  7. Transition Frequency : 250MHz (typical)
  8. Power Dissipation : 500mW (maximum)
  9. Operating Temperature: -55°C to +150°C

(Excluding Tax)

Buy High-Quality 8050 Through-Hole Transistor

Reliable High-Current NPN BJT for Amplification & Switching

The 8050 Transistor is a robust NPN Bipolar Junction Transistor in a TO-92 through-hole package. It is designed for high-current applications, making it ideal for audio amplification, signal processing, and switching in industrial and consumer electronics.

Key Features

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-92 (Through-Hole)
  • Collector-Emitter Voltage (VCEO): 25V (max)
  • Collector Current (IC): 1.5A (max)
  • Emitter-Base Voltage (VEBO): 5V (max)
  • DC Current Gain (hFE): 40 to 300 (variant dependent)
  • Transition Frequency (fT): 100MHz (typical)
  • Power Dissipation: 1W (max)
  • Operating Temperature: -55°C to +150°C

Applications

  • Audio amplifier circuits
  • High-current switching circuits
  • Motor driver and control circuits
  • Signal processing in consumer electronics
  • General-purpose through-hole PCB designs

Technical Specifications

Parameter Specification
Product Name 8050 Through-Hole Transistor
Type NPN Bipolar Junction Transistor (BJT)
Package Type TO-92 (Through-Hole)
Collector-Emitter Voltage (VCEO) 25V (max)
Collector Current (IC) 1.5A (max)
Emitter-Base Voltage (VEBO) 5V (max)
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100MHz (typical)
Power Dissipation 1W (max)
Operating Temperature -55°C to +150°C

Bulk & OEM Supply: Contact Edzeal Sales for bulk orders, OEM-grade quality testing, and competitive wholesale pricing for the 8050 transistor.

 

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