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Transistor 2N2222A 1726

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Specification:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package Type: TO-92 (through-hole)
  3. Collector-Emitter Voltage : 40V (maximum)
  4. Collector Current : 800mA (maximum)
  5. Emitter-Base Voltage : 5V (maximum)
  6. DC Current Gain : 100 to 300 (depending on the variant)
  7. Transition Frequency : 250MHz (typical)
  8. Power Dissipation : 500mW (maximum)
  9. Operating Temperature: -55°C to +150°C

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