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1815 Through Hole DipTransistor


Specification:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package Type: TO-92 (through-hole)
  3. Collector-Emitter Voltage : 50V (maximum)
  4. Collector Current : 150mA (maximum)
  5. Emitter-Base Voltage : 5V (maximum)
  6. DC Current Gain : 110 to 800 (depending on the variant)
  7. Transition Frequency : 250MHz (typical)
  8. Power Dissipation : 300mW (maximum)
  9. Operating Temperature: -55°C to +150°C

(Excluding Tax)

Buy High-Quality 1815 Through-Hole Transistor

Reliable NPN BJT for Signal Amplification & Switching

The 1815 transistor is a high-quality NPN Bipolar Junction Transistor in a standard TO-92 through-hole package. It is designed for general-purpose switching and low-noise signal amplification, making it suitable for audio, RF, and low-power electronic circuits.

Key Features

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-92 (Through-Hole)
  • Collector-Emitter Voltage (VCEO): 50V (max)
  • Collector Current (IC): 150mA (max)
  • Emitter-Base Voltage (VEBO): 5V (max)
  • DC Current Gain (hFE): 110 to 800 (variant dependent)
  • Transition Frequency (fT): 250MHz (typical)
  • Power Dissipation: 300mW (max)
  • Operating Temperature: -55°C to +150°C

Applications

  • Low-noise audio signal amplification
  • General-purpose switching
  • RF amplification and signal processing
  • Hobby electronics and DIY projects
  • Through-hole circuit designs

Technical Specifications

Parameter Specification
Product Name 1815 Through-Hole Transistor
Type NPN Bipolar Junction Transistor (BJT)
Package Type TO-92 (Through-Hole)
Collector-Emitter Voltage (VCEO) 50V (max)
Collector Current (IC) 150mA (max)
Emitter-Base Voltage (VEBO) 5V (max)
DC Current Gain (hFE) 110 to 800
Transition Frequency (fT) 250MHz (typical)
Power Dissipation 300mW (max)
Operating Temperature -55°C to +150°C

Bulk & OEM Supply: Contact Edzeal Sales for bulk orders, OEM-grade quality assurance, and competitive volume pricing for 1815 through-hole transistors.

 

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