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Specification:

1. Type: PNP Bipolar Junction Transistor (BJT)
2. Package Type: TO-92 (through-hole)
3. Collector-Emitter Voltage : 40V (maximum)
4. Collector Current : 100mA (maximum)
5. Emitter-Base Voltage : 5V (maximum)
6. DC Current Gain : 110 to 800 (depending on the variant)
7. Transition Frequency : 250MHz (typical)
8. Power Dissipation : 500mW (maximum)
9. Operating Temperature: -55°C to +150°C

Specification:

1. Type: Triac (Bidirectional Triode for Alternating Current)
2. Package Type: TO-220 (through-hole)
3. Repetitive Peak Off-State Voltage : 400V (maximum)
4. RMS On-State Current : 4A (maximum)
5. Gate Trigger Current : 5mA (typical)
6. Gate Trigger Voltage : 1.3V (typical)
7. Holding Current : 5mA (minimum)
8. Power Dissipation : 1W (maximum)
9. Operating Temperature: -40°C to +125°C