Transistors
Showing 1–12 of 16 results
-
-
-
-
EDZeal, SMD Transistors
SMD TR BC 548 848B
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: SMD (Surface Mount Device), typically SOT-23 or similar
- Collector-Emitter Voltage : 30V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor 1815
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 50V (maximum)
- Collector Current : 150mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 300mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor 2N2222A 1726
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 800mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 100 to 300 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor 8550
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 1A (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 40 to 320 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 547
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 548
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 30V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 557
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
Transistor BC 558
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a
