Looking to buy transistors online in bulk for electronic circuits, repairs, or resale? DDS International supplies a wide range of high-quality SMD and Through-Hole (DIP) transistors used in amplification, switching, and voltage regulation applications.
Our selection includes popular models like BC547, BC557, BC548, 2N2222A, 8050, 8550, TL431, TL432, and BT134/BT136, available under trusted brands such as EDZeal and DVAN. These components are widely used in power supplies, consumer electronics, lighting systems, and industrial circuits.
Whether you’re an OEM, repair technician, or bulk buyer, we offer competitive pricing and fast shipping across India. Our transistors come in multiple package types and electrical ratings to meet diverse project requirements.
Transistors
Showing 1–12 of 16 results
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DVAN, Through Hole (DIP) Transistor
134 BT Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 10mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
136 BT Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 600V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current: 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
1726 2N2222A Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 800mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 100 to 300 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
1815 Through Hole DipTransistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 50V (maximum)
- Collector Current : 150mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 300mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
406 PCR Through Hole Dip Transistor
Specification:
- Type: Triac (Bidirectional Triode for Alternating Current)
- Package Type: TO-220 (through-hole)
- Repetitive Peak Off-State Voltage : 400V (maximum)
- RMS On-State Current : 4A (maximum)
- Gate Trigger Current : 5mA (typical)
- Gate Trigger Voltage : 1.3V (typical)
- Holding Current : 5mA (minimum)
- Power Dissipation : 1W (maximum)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
431 TL Through Hole Dip Transistor
Specification:
- Type: Adjustable Shunt Regulator
- Package Type: Through-hole
- Anode Voltage : 36V (maximum)
- Cathode Voltage : 36V (maximum)
- Output Current : 1mA to 100mA (typical)
- Dynamic Impedance: 0.22Ω (typical)
- Operating Temperature: -40°C to +125°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
457 Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
548 Through Hole Dip Transistor
Specification:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 30V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
557 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 45V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
558 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 100mA (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 110 to 800 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a -
DVAN, Through Hole (DIP) Transistor
8550 Through Hole Dip Transistor
Specification:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package Type: TO-92 (through-hole)
- Collector-Emitter Voltage : 40V (maximum)
- Collector Current : 1A (maximum)
- Emitter-Base Voltage : 5V (maximum)
- DC Current Gain : 40 to 320 (depending on the variant)
- Transition Frequency : 250MHz (typical)
- Power Dissipation : 500mW (maximum)
- Operating Temperature: -55°C to +150°C
SKU: n/a